Semiconductor device and method for manufacturing same

ABSTRACT

A semiconductor device includes: a compound semiconductor substrate; an n-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a first channel layer; an n-type first barrier layer that forms a heterojunction with the first channel layer, and supplies an n-type charge to the first channel layer; and a p-type gate region that has a pn junction-type potential barrier against the n-type first barrier layer; and a p-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a p-type second channel layer, and an n-type gate region that has a pn junction-type potential barrier against the p-type second channel layer.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to compound semiconductor field-effecttransistors, particularly to semiconductor devices that include ann-type high electron mobility transistor and p-type field-effecttransistor formed on the same compound semiconductor substrate.

2. Description of the Related Art

Field-effect transistors with a compound semiconductor layer of amaterial such as GaAs have high electron mobility and desirablefrequency characteristics, and for this reason have been widely usedwith an n-channel for high-frequency region applications such as incellular phones. The n-channel FET (Field Effect Transistor) currentlyin use for the high frequency band is the high electron mobilitytransistor (HEMT). Its variant pseudomorphic high electron mobilitytransistor (PHEMT; Pseudomorphic HEMT) is also known that toleratescertain degrees of lattice mismatch in epitaxial growth, and thusrealizes even higher electron mobility. JPHEMTs (Junction PseudomorphicHEMTs) that form a PN junction at a gate portion are also known (see,for example, JP-A-11-150264). In JPHEMTs, a large positive voltage isapplied to the gate to reduce the carrier depleted region formed in achannel layer, and thereby reduce the parasitic resistance component ofthe channel layer.

With the movement toward high performance n-channel FETs, there is anincreasing demand for higher integration, which requires the developmentof complementary elements using a compound semiconductor. Ionimplantation is a common technique to simultaneously form n-channel andp-channel FETs on a compound semiconductor. In this technique, ann-channel forming region and a p-channel forming region are formed byselectively injecting a p-type dopant and an n-type dopant into the samesubstrate. However, the ion implantation technique requireshigh-temperature annealing of at least 800° C. after the ionimplantation, in order to activate the injected dopants.

JP-A-61-67275 describes a method of simultaneously forming an n-channelFET and a p-channel FET on a compound semiconductor. According to thispublication, an n-channel-type heterojunction field-effect transistorusing a two-dimensional electron gas as the carrier, and ap-channel-type heterojunction field-effect transistor using atwo-dimensional hole gas as the carrier are formed on a compoundsemiconductor substrate of GaAs. The n-channel-type heterojunctionfield-effect transistor includes a non-doped GaAs layer, a non-dopedAlGaAs layer, an n-type impurity doped AlGaAs layer, and an n-typeimpurity doped GaAs layer. Each layer is laminated using an epitaxialgrowth method. The n-type impurity doped AlGaAs layer has a gateelectrode of aluminum or titanium/platinum/gold. The n-type impuritydoped GaAs layer has source and drain electrodes of gold-germanium/gold.The p-channel-type heterojunction field-effect transistor includes anon-doped GaAs layer, a non-doped AlGaAs layer, a p-type impurity dopedAlGaAs layer, and a p-type impurity doped GaAs layer laminated on thelaminate structure using an epitaxial growth method. The p-type impuritydoped AlGaAs layer has a gate electrode of Al or titanium/platinum/gold.Source and drain electrodes of gold/zinc/gold are formed on the p-typeimpurity doped GaAs layer.

SUMMARY OF THE INVENTION

Applying the ion implantation technique to HEMTs requires a heattreatment of at least 800° C. after the impurity doping. However,because the heterojunction is formed using an epitaxial growth methodperformed at a temperature of about 600° C., the annealing temperatureof 800° C. or more causes the interdiffusion of the compound compositionelement or impurity element to occur at the heterojunction interface,making it difficult to realize the heterojunction as intended.

The gates in the field-effect transistors described in JP-A-61-67275 areof a Schottky barrier type. It is therefore difficult to control thethreshold voltage, or to operate the p-channel field-effect transistorin an enhancement mode. This presents a problem in realizingcomplementary transistors with reduced leak current by forming ann-channel field-effect transistor and a p-channel field-effecttransistor on the same substrate.

The present invention addresses the foregoing and other problemsassociated with conventional methods and devices.

According to an embodiment of the present invention, there is provided asemiconductor device that includes: a compound semiconductor substrate;an n-channel field-effect transistor region formed on the compoundsemiconductor substrate, and that includes a first channel layer; ann-type first barrier layer that forms a heterojunction with the firstchannel layer, and supplies an n-type charge to the first channel layer;and a p-type gate region that has a pn junction-type potential barrieragainst the n-type first barrier layer; and a p-channel field-effecttransistor region formed on the compound semiconductor substrate, andthat includes: a p-type second channel layer, and an n-type gate regionthat has a pn junction-type potential barrier against the p-type secondchannel layer.

The semiconductor device according to the embodiment of the presentinvention may be configured such that the p-channel field-effecttransistor region be a region that includes the first channel layer, then-type first barrier layer, and the second channel layer laminated inthis order above the compound semiconductor substrate.

The semiconductor device according to the embodiment of the presentinvention may be configured such that the n-channel field-effecttransistor region be a region that includes the p-type second channellayer; an n-type gate layer formed simultaneously with the n-type gateregion; the first channel layer; and the n-type first barrier layerlaminated in this order above the compound semiconductor substrate.

The semiconductor device according to the embodiment of the presentinvention may be configured to further include a gate-leak preventionlayer between the n-type gate region and the p-type second channellayer.

The semiconductor device according to the embodiment of the presentinvention may be configured such that the p-type second channel layerinclude p-type source and drain regions formed as Zn-diffused layers,and that are separated from each other with the n-type gate region inbetween.

The semiconductor device according to the embodiment of the presentinvention may be configured to further include an n-type second barrierlayer formed between the compound semiconductor substrate and the firstchannel layer, and that supplies an n-type charge to the first channellayer.

The semiconductor device according to the embodiment of the presentinvention may be configured such that the p-channel field-effecttransistor region include a backgate electrode.

The semiconductor device according to the embodiment of the presentinvention may be configured such that the backgate electrode of thep-channel field-effect transistor be formed on the n-type first barrierlayer.

According to another embodiment of the present invention, there isprovided a semiconductor device manufacturing method that includes thesteps of : forming a multilayered film by the sequential epitaxialgrowth of a first buffer layer, a first channel layer, an n-type firstbarrier layer, a second buffer layer, a p-type second channel layer, andan n-type gate layer on a compound semiconductor substrate; selectivelyremoving the n-type gate layer to form an n-type gate region for ap-channel field-effect transistor; selectively removing the p-typesecond channel layer so as to lay out a p-channel field-effecttransistor region in which the p-type second channel layer remains withthe n-type gate region, and an n-channel field-effect transistor regionin which the n-type first barrier layer remains; forming an insulatingfilm simultaneously on exposed surfaces of the p-channel field-effecttransistor region and the n-channel field-effect transistor region, andforming first opening portions through the insulating film; diffusing Znimpurities through the first opening portions to simultaneously formsource and drain regions for the p-channel field-effect transistor, anda gate region for an n-channel field-effect transistor; forming anelement isolation region that electrically separates the p-channelfield-effect transistor region and the n-channel field-effect transistorregion from each other; and forming a metal electrode in the source anddrain regions for the p-channel field-effect transistor, and in the gateregion for the n-channel field-effect transistor.

The semiconductor device manufacturing method according to theembodiment of the present invention may be configured to further includethe step of forming a backgate electrode for the p-channel field-effecttransistor on the n-type first barrier layer simultaneously when forminga metal electrode in source and drain regions for the n-channelfield-effect transistor.

According to still another embodiment of the present invention, there isprovided a semiconductor device manufacturing method that includes thesteps of: forming a multilayered film by the sequential epitaxial growthof a first buffer layer, a p-type second channel layer, an n-type gatelayer, an n-type second barrier layer, a first channel layer, and ann-type first barrier layer on a compound semiconductor substrate;forming an element isolation region that electrically separates ap-channel field-effect transistor region and an n-channel field-effecttransistor region from each other; selectively removing the n-type firstbarrier layer, the first channel layer, and the n-type second barrierlayer of the p-channel field-effect transistor region; selectivelyremoving the n-type gate layer of the p-channel field-effect transistorregion to form an n-type gate region for a p-channel field-effecttransistor; forming an insulating film simultaneously on exposedsurfaces of the p-channel field-effect transistor region and then-channel field-effect transistor region, and forming opening portionsthrough the insulating film; diffusing Zn impurities through the openingportions to simultaneously form source and drain regions for thep-channel field-effect transistor, and a gate region for an n-channelfield-effect transistor; and forming a metal electrode in the source anddrain regions for the p-channel field-effect transistor, and in the gateregion for the n-channel field-effect transistor.

The semiconductor device manufacturing method according to theembodiment of the present invention may be configured to further includethe step of forming a backgate electrode for the p-channel field-effecttransistor on the n-type first barrier layer simultaneously when forminga metal electrode in source and drain regions for the n-channelfield-effect transistor.

In the semiconductor device according to the embodiment of the presentinvention, an n-channel high electron mobility transistor and ap-channel field-effect transistor are formed on the same compoundsemiconductor substrate. The n-channel field-effect transistor includesa first channel layer; an n-type first barrier layer that forms aheterojunction with the first channel layer, and supplies an n-typecharge to the first channel layer; and a p-type gate region that has apn junction-type potential barrier against the n-type first barrierlayer. The p-channel field-effect transistor includes a p-type secondchannel layer, and an n-type gate region that has a pn junction-typepotential barrier against the p-type second channel layer. Because thegate region of each transistor has a pn junction-type potential barrier,the turn-on voltage can be increased more than that in the Schottkybarrier. Further, the control of threshold voltage and the operation inan enhancement mode can be realized with ease while reducing thereversed gate leak current.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic longitudinal sectional view of a semiconductordevice according to an embodiment of the present invention.

FIG. 2 is a schematic longitudinal sectional view of a semiconductordevice according to another embodiment of the present invention.

FIG. 3 is a schematic view representing a semiconductor devicemanufacturing method according to an embodiment of the presentinvention.

FIG. 4 is a schematic view representing the semiconductor devicemanufacturing method according to an embodiment of the presentinvention.

FIG. 5 is a schematic view representing the semiconductor devicemanufacturing method according to an embodiment of the presentinvention.

FIG. 6 is a schematic view representing the semiconductor devicemanufacturing method according to an embodiment of the presentinvention.

FIG. 7 is a schematic view representing the semiconductor devicemanufacturing method according to an embodiment of the presentinvention.

FIG. 8 is a schematic view representing the semiconductor devicemanufacturing method according to an embodiment of the presentinvention.

FIG. 9 is a schematic view representing the semiconductor devicemanufacturing method according to an embodiment of the presentinvention.

FIG. 10 is a schematic view representing the semiconductor devicemanufacturing method according to an embodiment of the presentinvention.

FIG. 11 is a schematic view representing the semiconductor devicemanufacturing method according to an embodiment of the presentinvention.

FIG. 12 is a schematic longitudinal sectional view of a semiconductordevice according to yet another embodiment of the present invention.

FIG. 13 is a diagram representing a characteristic of the semiconductordevice according to yet another embodiment of the present invention.

FIG. 14 is a schematic view representing a manufacturing method of thesemiconductor device according to yet another embodiment of the presentinvention.

FIG. 15 is a schematic view representing a manufacturing method of thesemiconductor device according to yet another embodiment of the presentinvention.

FIG. 16 is a schematic longitudinal sectional view of a semiconductordevice according to still another embodiment of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

A semiconductor device according to an embodiment of the presentinvention includes a p-channel field-effect transistor-forming region(hereinafter, “pFET region”), and an n-channel field-effecttransistor-forming region (hereinafter, “nFET region”) on a singlecompound semiconductor substrate.

The nFET region includes an n-type second barrier layer, a first channellayer, an n-type first barrier layer, a p-type gate region formed on then-type first barrier layer, and a gate electrode on the compoundsemiconductor substrate. The n-type second barrier layer can be omitted.

The interface between the n-type second barrier layer and the firstchannel layer, and between the first channel layer and the n-type firstbarrier layer are heterojunction interfaces. The n-type first barrierlayer and the n-type second barrier layer have a wider band gap than thefirst channel layer. A pn junction-type potential barrier occurs betweenthe n-type first barrier layer and the p-type gate region. The pnjunction-based potential barrier has a higher built-in voltage than aSchottky barrier. Thus, a higher positive voltage can be applied to thep-type gate region. Applying a positive voltage to the p-type gateregion produces a well potential at the interface between the firstchannel layer and the n-type first barrier layer or the n-type secondbarrier layer. The electrons supplied from the n-type first barrierlayer or the n-type second barrier layer to the well potential behavelike a high-mobility two-dimensional electron gas. The electrons aretherefore able to move at high speed between the source and drainregions (not illustrated), and a fast-operating switching element can berealized.

The pFET region includes a gate-leak prevention layer, a second channellayer, an n-type gate region, and source and drain regions on the n-typefirst barrier layer. Gate leak current can be reduced by the provisionof the gate-leak prevention layer. The gate-leak prevention layer can beomitted. The pFET region 3 and the nFET region 4 are electricallyseparated from each other by an element isolation region 12.

The n-type gate region has a pn junction-type potential barrier againstthe second channel layer, enabling driving in an enhancement mode inwhich the gate voltage applied to the gate is lower than that in aSchottky-type gate field-effect transistor. Further, by adjusting theimpurity concentration of the n-type gate region, the controllability ofthe transistor threshold voltage can be improved. Negative voltage isapplied to the n-type gate region to vary the depth of the depletionlayer formed in the second channel layer, and thereby control thecurrent (holes) that flows between the source and drain.

Because the nFET and pFET having a pn junction-type gate region areformed on the same substrate using a compound semiconductor,complementary FETs having reduced leak current and capable of high-speedoperation can be formed in high density.

Instead of forming the pFET on the n-type first barrier layer, a pFETthat includes layers such as a second channel layer and an n-type gatelayer may be first formed on the compound semiconductor substrate, andthen an nFET that includes layers such as an n-type second barrierlayer, a first channel layer, and an n-type first barrier layer may beformed on the n-type gate layer.

A semiconductor device manufacturing method of an embodiment of thepresent invention includes the steps of sequentially laminating a firstbuffer layer, a first channel layer, an n-type first barrier layer, asecond buffer layer, a p-type second channel layer, and an n-type gatelayer on a compound semiconductor substrate, selectively forming ann-type gate region to form a p-channel FET n-type gate region,selectively removing the second channel layer to lay out a pFET regionand an nFET region, and forming an insulating film on the surface. Themethod further includes the steps of forming opening portions throughthe insulating film and diffusing Zn impurities to simultaneously formpFET source and drain regions and an nFET gate region, forming anelement isolation region to separate the pFET region and the nFET regionfrom each other, and simultaneously forming pFET source and drainelectrodes in the pFET region, and a gate electrode in the nFET gateregion.

As a result, the pFET region and the nFET region are formed on the upperlevel and the lower level, respectively, of the stepped product. Withregard to the order of sequential lamination on the compoundsemiconductor substrate 2, the p-type second channel layer and then-type gate layer may be deposited before laminating the n-type secondbarrier layer, the first channel layer, and the n-type first barrierlayer in this order. In this case, the nFET region and the pFET regionare formed on the upper level and the lower level, respectively, of thestepped product.

Because the pFET and the nFET can be simultaneously formed in the samestep, the number of manufacturing steps can be reduced to lower themanufacturing cost.

First Embodiment

FIG. 1 is a schematic longitudinal sectional view of a semiconductordevice according to First Embodiment of the present invention. Thefollowing detailed description will be given through the case wheregroup III-V compounds are used for the compound semiconductor. First, annFET region 4 is described. A GaAs monocrystalline substrate is used asa compound semiconductor substrate 2. A first buffer layer 5 is anon-doped i-GaAs layer with no impurities. An n-type second barrierlayer 8 has a bilayer structure including an n-type charge supply layer8 a and a high-resistance layer 8 b. The n-type charge supply layer 8 ais an n⁺AlGaAs layer doped with the n-type impurity Si a highconcentration of 1.0×10¹² to 4.0×10¹² atoms/cm², and that has athickness of about 3 nm. The high-resistance layer 8 b is an i-AlGaAslayer with no impurities and having a thickness of about 3 nm. The firstchannel layer 7 is an i-InGaAs layer with no impurities and having athickness of 5 nm to 15 nm. The n-type charge supply layer 8 a isprovided to supply electrons to the first channel layer 7. Thehigh-resistance layer 8 b is formed to provide a desirable heterojunction at the interface with the overlying, first channel layer 7.

An n-type first barrier layer 6 has a three-layer structure including ahigh-resistance layer 6 b, a high-resistance layer 6 c, and an n-typecharge supply layer 6 a sandwiched in between. The high-resistance layer6 b is an i-AlGaAs layer with no impurities and having a thickness ofabout 3 nm. The n-type charge supply layer 6 a is an n⁺AlGaAs layerdoped with the n-type impurity Si at a high concentration of 1.0×10¹² to4.0×10¹² atoms/cm², and that has a thickness of about 6 nm. Thehigh-resistance layer 6 c is an n⁻AlGaAs layer doped with the n-typeimpurity Si at a low concentration of 1.0×10¹⁰ to 4.0×10¹¹ atoms/cm²,and that has a thickness of 70 nm to 200 nm. The n-type charge supplylayer 6 a is provided to supply electrons to the first channel layer 7.The high-resistance layer 6 b is formed to provide a desirableheterojunction at the interface with the underlying, first channel layer7.

A p-type gate region 10 is a p-type region formed in the Zn-diffusedn⁻AlGaAs layer of the high-resistance layer 6 c. An insulating film(silicon nitride film) 9 is formed on the upper surface of thehigh-resistance layer 6 c, and an opening portion used for the diffusionof Zn is formed through the p-type gate region 10. A gate electrode 11is formed in the opening portion. The gate electrode 11 is a metalelectrode formed of sequentially laminated titanium (Ti), platinum (Pt),and gold (Au), and has an ohmic contact with the underlying, p-type gateregion 10. Though not illustrated in FIG. 1, a source electrode and adrain electrode are formed on the both sides of the gate electrode 11.These electrodes have an ohmic contact with the high-resistance layer 6c.

A pFET region 3 is described below. The pFET region 3 has the samelaminate structure as the nFET region 4 up to the high-resistance layer6 c. A cap layer (n⁺GaAs layer) 26 containing n-type impurities, forexample, such as Si at a concentration of 6×10¹⁸ atoms/cm³ is formed onthe high-resistance layer 6 c, and a second buffer layer (i-GaAs layer)15 with no impurities and having a thickness of 10 nm to 100 nm isformed thereon.

A second channel layer 13 is formed on the second buffer layer 15, andis a p⁻GaAs layer doped with p-type impurities, for example, such as C(carbon) at a concentration of 1×10¹⁶ to 5×10¹⁸ atoms/cm³, and that hasa thickness of 30 nm to 250 nm. A gate-leak prevention layer 14, ani-AlGaAs layer with no impurities and having a thickness of 0 nm to 50nm, is formed on the second channel layer 13. An n-type gate region 18has a bilayer structure including an n-type first gate layer 18 a and ann-type second gate layer 18 b on the gate-leak prevention layer 14. Then-type first gate layer 18 a is formed of n⁻InGaP doped with n-typeimpurities such as Si at a concentration of 1×10¹⁷ to 5×10¹⁹ atoms/cm³,and that has a thickness of 10 nm to 50 nm. The n-type second gate layer18 b is formed of n⁻GaAs doped with n-type impurities such as Si at aconcentration of 1×10¹⁷ to 5×10¹⁹ atoms/cm³, and that has a thickness of50 nm to 200 nm.

Source and drain regions 16 are separated from each other with then-type gate region 18 in between, and extend to a portion of the secondchannel layer 13 through the gate-leak prevention layer 14. The sourceand drain regions. 16 are diffused regions in portions of the gate-leakprevention layer 14 and the second channel layer 13 where Zn impuritieshave been diffused. An insulating film (silicon nitride film) 9 isformed on the side surfaces of the second buffer layer 15, the secondchannel layer 13, the gate-leak prevention layer 14, and the n-type gateregion 18, and on the surfaces of the gate-leak prevention layer 14 andthe n-type gate region 18. The insulating film 9 has opening portionsused to diffuse Zn in the source and drain regions 16, and metallicsource and drain electrodes 17 are formed in the opening portions. Theseelectrodes have an ohmic contact with the underlying, source and drainregions 16.

The element isolation region 12 is a boundary region for the pFET region3 and the nFET region 4, and is formed through the n-type second barrierlayer 8, the first channel layer 7, and the n-type first barrier layer6. The element isolation region 12 is formed by the ion implantation ofB (boron).

The p-channel FET including a pn junction gate in the pFET region 3, andthe n-channel FET including a pn junction gate in the nFET region 4 areformed in this manner. In this way, the FETs, particularly the p-channelFET, can operate in an enhance mode, and fast-operating complementaryFETs with reduced leak current can be realized.

Second Embodiment

FIG. 2 is a schematic longitudinal sectional view of a semiconductordevice 20 according to Second Embodiment of the present invention. Likenumerals represent like members or members with similar functions.

The semiconductor device 20 includes a pFET region 3 and an nFET region4 formed on a compound semiconductor substrate 2. The pFET region 3 isdescribed first. A first buffer layer 5 of GaAs with no impurities isformed on the compound semiconductor substrate 2 of GaAs monocrystals. Acap layer 26 of n⁺GaAs doped with n-type impurities, and a second bufferlayer 15 of i-GaAs with no impurities are formed on the first bufferlayer 5. A second channel layer 13 of p⁻GaAs doped with p-typeimpurities is formed thereon.

A gate-leak prevention layer 14 of i-AlGaAs with no impurities is formedon the second channel layer 13. On the gate-leak prevention layer 14 isformed an n-type gate region 18 of a bilayer structure that includes ann-type first gate layer 18 a of n⁻InGaP doped with n-type impurities,and an n-type second gate layer 18 b of n⁻GaAs doped with n-typeimpurities. Source and drain regions 16 are separated from each otherwith the n-type gate region 18 in between, and extend to a portion ofthe second channel layer 13 through the gate-leak prevention layer 14.The source and drain regions 16 are diffused regions in portions of thegate-leak prevention layer 14 and the second channel layer 13 where Znimpurities have been diffused.

An insulating film (silicon nitride film) 9 is formed on the sidesurfaces of the second buffer layer 15, the second channel layer 13, thegate-leak prevention layer 14, and the n-type gate region 18, and on thesurfaces of the gate-leak prevention layer 14 and the n-type gate region18. The insulating film 9 has opening portions used to diffuse Zn in thesource and drain regions 16, and metallic source and drain electrodes 17are formed in the opening portions. These electrodes have an ohmiccontact with the underlying, source and drain regions 16. The insulatingfilm 9 is also formed on the side surface where the nFET region 4 is notformed, specifically on the side surfaces of the second buffer layer 15,the second channel layer 13, and the gate-leak prevention layer 14.

The nFET region 4 is described below. A laminate structure of the firstbuffer layer 5, the second buffer layer 15, the second channel layer 13,the gate-leak prevention layer 14, the n-type first gate layer 18 a, andthe n-type second gate layer 18 b is formed on the compoundsemiconductor substrate 2 as with the laminate structure in the pFETregion 3. On the laminate structure is formed an n-type second barrierlayer 8 of a three-layer structure that includes a high-resistance layer8 c of i-AlGaAs with no impurities, an n-type charge supply layer 8 a ofn⁺AlGaAs doped with high-concentration n-type impurities, and ahigh-resistance layer 8 b of i-AlGaAs with no impurities. A firstchannel layer 7 of i-InGaAs with no impurities is formed thereon. On thefirst channel layer 7 is formed an n-type first barrier layer 6 of athree-layer structure that includes a high-resistance layer 6 b ofi-AlGaAs with no impurities, an n-type charge supply layer 6 a ofn⁺AlGaAs doped with high-concentration n-type impurities, and ahigh-resistance layer 6 c of n⁻AlGaAs doped with n-type impurities.

A p-type gate region 10 is a Zn-diffused p-type region in the n⁻AlGaAshigh-resistance layer 6 c. The insulating film (silicon nitride film) 9is formed on the upper surface of the high-resistance layer 6 c, and anopening portion used to diffuse Zn in the p-type gate region 10 isformed through the insulating film 9. A gate electrode 11 is formed inthe opening portion. The gate electrode 11 is a metal electrode thatincludes sequentially laminated titanium (Ti), platinum (Pt), and gold(Au), and has an ohmic contact with the underlying, p-type gate region10. Though not illustrated in FIG. 2, a source electrode and a drainelectrode are formed on the both sides of the gate electrode 11. Theseelectrodes have an ohmic contact with the high-resistance layer 6 c.

An element isolation region 12 is a boundary region for the pFET region3 and the nFET region 4, and is formed through the n-type second barrierlayer 8, the first channel layer 7, and the n-type first barrier layer6. The element isolation region 12 is also formed on the surface of theinsulating film 9 formed on the side surface of the pFET region 3, andon the side surface of the nFET region 4, specifically on the sidesurfaces of the second buffer layer 15, the second channel layer 13, thegate-leak prevention layer 14, the n-type gate layer 21, the n-typesecond barrier layer 8, the first channel layer 7, and the n-type firstbarrier layer 6. Further, the insulating film 9 is also formed on theexposed surface of the element isolation region 12 formed in theboundary region of the pFET region 3 and the nFET region 4.

The thickness of each layer, the impurity material of the layercontaining impurity, and the impurity concentration are the same as inFirst Embodiment.

Third Embodiment

A manufacturing method of a semiconductor device 1 according to ThirdEmbodiment of the present invention is described below with reference toFIG. 3 to FIG. 11. Like numerals represent like members or members withsimilar functions.

FIG. 3 is a schematic longitudinal sectional view representing alaminate structure formed by the epitaxial growth of layers of primarilyGaAs material on a GaAs monocrystalline substrate using, for example, aMOCVD (Metal. Organic Chemical Vapor Deposition) method. A GaAs layerwith no impurities is epitaxially grown on a compound semiconductorsubstrate 2 of GaAs monocrystals to form a first buffer layer 5 of about200 nm thick. Then, an n⁺AlGaAs layer doped with the n-type impurity Siat a high concentration of 1.0×10¹² to 4.0×10¹² atoms/cm², for example,3.0×10¹² atoms/cm² is epitaxially grown on the first buffer layer 5 toform an n-type charge supply layer 8 a of about 3 nm thick. This isfollowed by the epitaxial growth of a i-AlGaAs layer with no impuritiesto form a high-resistance layer 8 b in a thickness of about 3 nm. Then-type charge supply layer 8 a and the high-resistance layer 8 b form ann-type second barrier layer 8. The composition ratio of aluminum in then-type second barrier layer 8 is 0.2 to 0.3, for example,Al_(0.2)Ga_(0.8)As.

Then, a i-InGaAs layer with no impurities is epitaxially grown on then-type second barrier layer 8 to form a first channel layer 7 of about 5nm to 15 nm thick. The composition ratio of indium (In) in the firstchannel layer 7 is 0.1 to 0.4, for example, In_(0.2)Ga_(0.8)As, so as toprovide a narrower band gap than that of the n-type second barrier layer8.

Thereafter, a i-AlGaAs layer with no impurities is epitaxially grown onthe first channel layer 7 to form a high-resistance layer 6 b of about 2nm thick. Then, an n⁺AlGaAs layer doped with the n-type impurity Si at ahigh concentration of 1.0×10¹² to 4.0×10¹² atoms/cm² is epitaxiallygrown to form an n-type charge supply layer 6 a of about 6 nm thick. Ann⁻AlGaAs layer doped with the n-type impurity Si at low concentration isthen epitaxially grown to form a high-resistance layer 6 c of 70 nm to200 nm thick. The high-resistance layer 6 b, the n-type charge supplylayer 6 a, and the high-resistance layer 6 c form an n-type firstbarrier layer 6. The composition ratio of aluminum in the n-type firstbarrier layer 6 is 0.2 to 0.3, for example, Al_(0.2)Ga_(0.8)As, so as toprovide a wider band gap than that of the first channel layer 7.

Next, an n⁺GaAs film doped with n-type impurities at 6×10¹⁸ atoms/cm³ isepitaxially grown on the n-type first barrier layer 6 to form a caplayer 26. Then, a i-GaAs layer with no impurities is epitaxially grownto form a second buffer layer 15 of 10 nm to 100 nm thick.

Thereafter, a p⁻GaAs layer doped with p-type impurities, for example,such as C at a concentration of 1×10¹⁶ to 5×10¹⁸ atoms/cm³ isepitaxially grown on the second buffer layer 15 to form a second channellayer 13 of 30 nm to 250 nm thick. This is followed by the epitaxialgrowth of a i-AlGaAs layer with no impurities to form a gate-leakprevention layer 14 of 0 to 50 nm thick. The zero thickness means thatthe gate-leak prevention layer 14 is not an essential component. Thecomposition ratio of aluminum in the gate-leak prevention layer 14 is0.2 to 0.3, for example, Al_(0.2)Ga_(0.8)As.

Then, an n⁻InGaP layer doped with n-type impurities such as Si at aconcentration of 1×10¹⁷ to 5×10¹⁹ atoms/cm³ is epitaxially grown on thegate-leak prevention layer 14 or the second channel layer 13 to form ann-type first gate layer 18 a of 10 nm to 50 nm thick. Thereafter, ann⁻GaAs layer doped with n-type impurities such as Si at 1×10¹⁷ to 5×10¹⁹atoms/cm³ is epitaxially grown to form an n-type second gate layer 18 bof 50 to 200 nm thick. The n-type first gate layer 18 a and the n-typesecond gate layer 18 b form an n-type gate layer 21. In these steps, theepitaxial growth is performed temperature of about 600° C.

Next, as illustrated in FIG. 4, the n-type second gate layer 18 b andthe n-type first gate layer 18 a are selectively removed by etching toform an n-type gate region 18 in the pFET region 3. The n-type gateregion 18 is maintained using a photolithography technique and wet ordry etching. Then, as illustrated in FIG. 5, the gate-leak preventionlayer 14, the second channel layer 13, the second buffer layer 15, andthe cap layer 26 are sequentially removed by selective etching. Theremoved region becomes the nFET region 4, and the remaining regionbecomes the pFET region 3.

Next, as illustrated in FIG. 6, an insulating film (silicon nitridefilm) 9 is formed in a thickness of 100 nm to 500 nm on the exposedupper surface of the substrate, using a plasma CVD method. Then, asillustrated in FIG. 7, first opening portions 22 a and 22 b for thesource and drain regions of the pFET region 3, and a first openingportion 22 c for the gate region of the nFET region 4 are formed throughthe insulating film 9. The first opening portions 22 a, 22 b, and 22 care formed by using a photolithography technique, and by anisotropicetching that employs, for example, a RIE (Reactive Ion Etching)technique.

Thereafter, as illustrated in FIG. 8, Zn is diffused through thegate-leak prevention layer 14 and down halfway into the second channellayer 13 in the thickness direction through the first opening portions22 a and 22 b of the insulating film 9, and simultaneously halfway intothe high-resistance layer 6 c in the thickness direction through thefirst opening portion 22 c. As a result, p-type source and drain regions16 and a p-type gate region 10 are formed in the pFET region 3 and annFET region 4, respectively. The introduction and diffusion of Znthrough the first opening portions 22 a, 22 b, and 22 c is performed byheating the substrate to about 600° C. in a gas atmosphere that containsdiethylzinc (Zn(C₂H₅)₂) and arsine (AsH₃). The Zn diffusion through thefirst opening portion 22 c in the nFET region 4 should preferablyproceed to a depth distant apart from the upper surface of the firstchannel layer 7 by at least about 10 nm. Note that Zn can be injectedusing an ion implantation method.

Next, as illustrated in FIG. 9, the element isolation region 12 isformed that electrically separates the pFET region 3 and the nFET region4 from each other. The element isolation region 12 is formed down to thebottom of the n-type second barrier layer 8 through the n-type firstbarrier layer 6 and the first channel layer 7. The element isolationregion 12 can be formed by, for example, the ion implantation of B ions.

Thereafter, as illustrated in FIG. 10, a metal film is deposited on thesubstrate surface, and selectively removed using a photolithographytechnique and an etching technique to simultaneously form source anddrain electrodes 17 in the pFET region 3, and a gate electrode 11 in thenFET region 4. For example, the metal film is formed by depositingtitanium (Ti), platinum (Pt), and gold (Au) in thicknesses of 30 nm, 50nm, 120 nm, respectively, using an electron beam deposition method. As aresult, an ohmic contact is made in each of the Zn-diffused p-typesource and drain regions 16, and the Zn-diffused p-type gate region 10.

Further, as illustrated in FIG. 11, a protective film 25 made ofinsulating material is deposited on the substrate surface, and secondopening portions 23 are formed in the protective film 25 and theinsulating film 9 on the both sides of the gate electrode 11 in the nFETregion 4. Then, a gold-germanium (AuGe) alloy and nickel (Ni) aredeposited on the substrate surface in thicknesses of about 160 nm andabout 40 nm, respectively, using a resistive heating method, and areselectively removed using a photolithography technique and an etchingtechnique to form source and drain electrodes 24. The source and drainelectrodes 24 have an ohmic contact with the n-type high-resistancelayer 6 c. When forming the second opening portions 23 in the protectivefilm 25 and the insulating film 9, an opening portion may besimultaneously formed over the n-type gate region 18 of the pFET region3 to form a gate electrode for the pFET region 3, simultaneously withthe source and drain electrodes 24 for the nFET region 4.

Third Embodiment described a manufacturing method in which the p-channelFET and the n-channel FET of the structures described in FIG. 1 aresimultaneously formed. However, the p-channel FET and the n-channel FETof the structures described in FIG. 2 also can be formed simultaneouslyin the same manner.

Fourth Embodiment

A manufacturing method of a semiconductor device 20 according to FourthEmbodiment of the present invention is described below. A first bufferlayer (GaAs layer) 5 is epitaxially grown on a compound semiconductorsubstrate 2 of GaAs monocrystals. This is followed by the epitaxialgrowth of a cap layer 26 of n⁺GaAs doped with high-concentration n-typeimpurities, and a second buffer layer 15 of i-GaAs with no impurities.Then, a second channel layer 13 of p⁻GaAs doped with p-type impurities,and a gate-leak prevention layer 14 of i-AlGaAs with no impurities areepitaxially grown. Thereafter, an n-type first gate layer 18 a ofn⁻InGaP doped with low-concentration n-type impurities, and an n-typesecond gate layer 18 b of n⁻GaAs doped with n-type impurities areepitaxially grown sequentially to form an n-type gate layer 21.

Next, an n-type second barrier layer 8 is formed that includes ahigh-resistance layer 8 c of i-AlGaAs with no impurities, an n-typecharge supply layer 8 a of n⁺AlGaAs doped with high-concentration n-typeimpurities, and a high-resistance layer 8 b of i-AlGaAs with noimpurities. This is followed by the epitaxial growth of a first channellayer 7 of i-InGaAs with no impurities. Then, a high-resistance layer 6b of i-AlGaAs with no impurities, an n-type charge supply layer 6 a ofn⁺AlGaAs doped with high-concentration n-type impurities, and ahigh-resistance layer 6 c of n⁻AlGaAs doped with low-concentrationn-type impurities are epitaxially grown sequentially to form an n-typefirst barrier layer 6. The thickness of each layer, the impuritymaterial of the layer containing impurity, and the impurityconcentration are the same as in Third Embodiment.

Next, an element isolation region 12 is formed to electrically separatethe pFET region 3 and the nFET region 4 from each other, and the n-typefirst barrier layer 6, the first channel layer 7, and the n-type secondbarrier layer 8 in the pFET region 3 are selectively removed. Then, then-type gate layer 21 in the pFET region 3 is selectively removed to forman n-type gate region 18 having an laminate structure of the n-typefirst gate layer 18 a and the n-type second gate layer 18 b.

Thereafter, an insulating film (silicon nitride film) 9 is deposited onthe surfaces of the n-type first barrier layer 6 and the gate-leakprevention layer 14, and on the surface of the element isolation region12. Then, opening portions for the source and drain regions of the pFETregion 3, and for the gate region of the nFET region 4 are formed.Through the opening portions, Zn p-type impurities are introduced intothe gate-leak prevention layer 14, the second channel layer 13, and thehigh-resistance layer 6 c. As a result, source and drain regions 16, anda p-type gate region 10 are simultaneously formed in the pFET region 3and the nFET region 4, respectively.

Then, a metal film is deposited and selectively removed tosimultaneously form source and drain electrodes 17 and a gate electrode11 in the pFET region 3 and the nFET region 4, respectively. The gateelectrode of the pFET region 3, and the source and drain electrodes ofthe nFET region 4 can be simultaneously formed as in Third Embodiment.Further, the impurity concentration and thickness of each layer formedby epitaxial growth, the introduction and diffusion of Zn, thecompositions and thicknesses of the source electrode, the drainelectrode, and the gate electrode may be the same as those in ThirdEmbodiment.

Fifth Embodiment

FIG. 12 is a schematic longitudinal sectional view of a semiconductordevice 30 according to Fifth Embodiment of the present invention. Likenumerals represent like members or members with similar functions.Further, the thickness of each layer, the impurity material of the layercontaining impurity, and the impurity concentration are the same as inFirst Embodiment, except for the backgate electrode 31 described later.

The semiconductor device 30 according to Fifth Embodiment differs fromthe semiconductor device 1 of First Embodiment in that it furtherincludes a backgate electrode 31 in the pFET region 3. The provision ofthe backgate electrode 31 in the p-channel FET increasestransconductance, and thus improves the ON/OFF characteristic of thep-channel FET.

As illustrated in FIG. 12, the semiconductor device 30 includes a pFETregion 3 and an nFET region 4 on the compound semiconductor substrate 2.The nFET region 4 will not be described because it is no different fromthe nFET region 4 of the semiconductor device 1 according to FirstEmbodiment.

In the pFET region 3, a first buffer layer 5 of GaAs with no impuritiesis formed on the compound semiconductor substrate 2 of GaAsmonocrystals. An n-type second barrier layer 8, a first channel layer 7,an n-type first barrier layer 6, a cap layer 26, a second buffer layer15, and a second channel layer 13 are sequentially formed on the firstbuffer layer 5. A gate-leak prevention layer 14, and source and drainregions 16 are formed on the second channel layer 13. The source anddrain regions 16 are Zn impurity-diffused regions in portions of thegate-leak prevention layer 14 and the second channel layer 13. Thegate-leak prevention layer 14 may be omitted. The pFET region 3 and thenFET region 4 are electrically separated from each other by the elementisolation region 12.

An n-type gate region 18 is formed on the gate-leak prevention layer 14,and thus has a pn junction-type potential barrier against the secondchannel layer 13. This enables driving in an enhancement mode in whichthe gate voltage applied to the gate is lower than that in aSchottky-type gate field-effect transistor.

Further, in the pFET region 3 of the semiconductor device 30, thebackgate electrode 31 is formed on the n-type first barrier layer 6. Thebackgate electrode 31 may have, for example, a bilayer structure of agold-germanium (AuGe) alloy and nickel (Ni). The backgate electrode 31is electrically connected to an n-type gate region 18, though notillustrated.

The backgate electrode 31 can be formed at the time of forming sourceand drain electrodes 24 for the n-channel FET. Accordingly, noadditional step is required, and a resist mask is not necessary.

Measurement was made concerning the Id-Vg characteristic of thep-channel FET of the semiconductor device 1 according to FirstEmbodiment, and that of the p-channel FET of the semiconductor device 30of the presently described Fifth Embodiment. The results are shown inFIG. 13. Note that the gate width is 10 μm.

It can be seen in FIG. 13 that the p-channel FET of the semiconductordevice 30 according to Fifth Embodiment has a better p-channel FETon/off characteristic than the p-channel FET of the semiconductor device1 of First Embodiment.

For example, in the p-channel FET of the semiconductor device 1according to First Embodiment, the drain current Id is 4.71×10⁻⁵ (A) forthe gate voltage Vg of 0 V (ON state), and 8.23×10⁻⁸ (A) for the gatevoltage Vg of 1 V (OFF state). In contrast, in the p-channel FET of thesemiconductor device 30 according to Fifth Embodiment, the drain currentId is 5.05×10⁻⁵ (A) for the gate voltage Vg of 0 V (ON state), and1.75×10⁻¹¹ (A) for the gate voltage Vg of 1 V (OFF state).

Further, the p-channel FET of the semiconductor device 30 according toFifth Embodiment has a higher drain current Id at the gate voltage Vg of1.5 V, and a lower drain current Id at the gate voltage Vg of −1 V thanthe p-channel FET of the semiconductor device 1 of First Embodiment.

Furthermore, in the p-channel FET of the semiconductor device 30 ofFifth Embodiment, the drain current Id varies with the gate voltage Vgat a greater rate than in the p-channel FET of the semiconductor device1 of First Embodiment.

In this manner, by the provision of the backgate electrode 31 in thep-channel FET, the on/off characteristic of the p-channel FET can beimproved.

Although there are a number of possible layout methods for the backgateelectrode 31, the same effect can be obtained regardless of the layout,as long as the backgate electrode 31 is formed near regions of thep-channel FET where the n-type gate region 18 and the source and drainregions 16 are formed.

A manufacturing method of the semiconductor device 30 according to FifthEmbodiment is described below.

First, the steps represented in FIG. 3 and FIG. 4 are performed as inThird Embodiment. These steps are the same as in Third Embodiment, andthus will not be described.

As illustrated in FIG. 14, the gate-leak prevention layer 14, the secondchannel layer 13, the second buffer layer 15, and the cap layer 26 aresequentially removed by selective etching in a region of the pFET region3 where the backgate electrode 31 is to be formed (see FIG. 12), and inthe nFET region 4.

Next, the steps represented in FIG. 6 to FIG. 10 are performed as inThird Embodiment. These steps are the same as in Third Embodiment, andthus will not be described.

Then, as illustrated in FIG. 15, a protective film 25 of insulatingmaterial is deposited on the substrate surface, and second openingportions 23 are formed in the protective film 25 and the insulating film9 on the both sides of the gate electrode 11 in the nFET region 4.Simultaneously, a third opening portion 32 is formed in the protectivefilm 25 and the insulating film 9 formed on the n-type high-resistancelayer 6 c of the n-type first barrier layer 6 in the pFET region 3.

Then, a gold-germanium (AuGe) alloy and nickel (Ni) are deposited on thesubstrate surface in thicknesses of about 160 nm and about 40 nm,respectively, using a resistive heating method, and are selectivelyremoved using a photolithography technique and an etching technique tosimultaneously form the source and drain electrodes 24 and the backgateelectrode 31. As a result, the p-channel FET illustrated in FIG. 12 isformed. The source and drain electrodes 24 have an ohmic contact withthe n-type high-resistance layer 6 c. The backgate electrode 31 also hasan ohmic contact with the n-type high-resistance layer 6 c. When formingthe second opening portions 23 in the protective film 25 and theinsulating film 9, an opening portion may be simultaneously formed overthe n-type gate region 18 of the pFET region 3 to form the gateelectrode for the pFET region 3, simultaneously with the source anddrain electrddes 24 for the nFET region 4.

The backgate electrode 31 can be formed at the time of forming thesource and drain electrodes 24. Accordingly, no additional step isrequired, and a resist mask is not necessary.

Sixth Embodiment

FIG. 16 is a schematic longitudinal sectional view of a semiconductordevice 40 according to Sixth Embodiment of the present invention. Likenumerals represent like members or members with similar functions.Further, the thickness of each layer, the impurity material of the layercontaining impurity, and the impurity concentration are the same as inSecond Embodiment, except for the backgate electrode 31 and the n⁻GaAslayer 41 described later.

The semiconductor device 40 according to Sixth Embodiment differs fromthe semiconductor device 20 according to Second Embodiment in that ann⁻⁻GaAs layer 41 is formed between the first buffer layer 5 and the caplayer 26, and that a backgate electrode 31 is formed on the n⁻GaAs layer41 in the pFET region 3. The provision of the backgate electrode 31 inthe p-channel FET increases transconductance, and thus improves theON/OFF characteristic of the p-channel FET.

As illustrated in FIG. 16, the semiconductor device 40 includes a pFETregion 3 and an nFET region 4 formed on the compound semiconductorsubstrate 2. The nFET region 4 will not be described because it is nodifferent from the nFET region of the semiconductor device 10 accordingto Second Embodiment.

In the pFET region 3, a first buffer layer 5 of GaAs with no impuritiesis formed on the compound semiconductor substrate 2 of GaAsmonocrystals. The n⁻GaAs layer 41 of n⁻GaAs doped with the n-typeimpurity Si at a low concentration of 1.0×10¹⁰ to 4.0×10¹¹ atoms/cm² isformed on the first buffer layer 5.

A cap layer 26, a second buffer layer 15, and a second channel layer 13are sequentially formed on the n⁻GaAs layer 41, as in the semiconductordevice 20. A gate-leak prevention layer 14 and source and drain regions16 are formed on the second channel layer 13. The source and drainregions 16 are Zn impurity-diffused region in portions of the gate-leakprevention layer 14 and the second channel layer 13. The gate-leakprevention layer 14 maybe omitted. The pFET region 3 and the nFET region4 are electrically separated from each other by the element isolationregion 12.

In the semiconductor device 40, the backgate electrode 31 is formed onthe n-type first barrier layer 6. The backgate electrode 31 can have,for example, a bilayer structure of a gold-germanium (AuGe) alloy andnickel (Ni). Though not illustrated, the backgate electrode 31 iselectrically connected to the n-type gate region 18.

In this manner, the semiconductor device 40 includes the backgateelectrode 31 as does the semiconductor device 30, and thus can improvethe ON/OFF characteristic of the p-channel FET.

A manufacturing method of the semiconductor device 40 according to SixthEmbodiment is described below.

First, the first buffer layer (GaAs layer) 5 is epitaxially grown on thecompound semiconductor substrate 2 of GaAs monocrystals. This isfollowed by the epitaxial growth of the n⁻GaAs layer 41 of n⁻GaAs dopedwith the n-type impurity Si at a low concentration of 1.0×10¹⁰ to4.0×10¹¹ atoms/cm². Then, as in Fourth Embodiment, the cap layer 26, thesecond buffer layer 15, the second channel layer 13, and the gate-leakprevention layer 14 are epitaxially grown sequentially, followed by thesequential epitaxial growth of the n-type first gate layer 18 a and then-type second gate layer 18 b to form the n-type gate layer 21.

Then, as in Fourth Embodiment, the resistance layer 8 b, the n-typecharge supply layer 8 a, the n-type second barrier layer 8, the firstchannel layer 7, and the n-type first barrier layer 6 are formed,followed by formation of the element isolation region 12 to electricallyseparate the pFET region 3 and the nFET region 4 from each other.

Thereafter, the n-type first barrier layer 6, the first channel layer 7,and the n-type second barrier layer 8 in the pFET region 3 areselectively removed. Then, the gate-leak prevention layer 14, the secondchannel layer 13, the second buffer layer 15, and the cap layer 26 onthe region of the pFET region 3 where the backgate electrode 31 is to beformed are selectively removed.

Then, as in Fourth Embodiment, the n-type gate region 18 is formed, andthe insulating film (silicon nitride film) 9 is deposited on thesurfaces of the n-type first barrier layer 6 and the gate-leakprevention layer 14, and on the surfaces of the n⁻GaAs layer 41 and theelement isolation region 12. As in Fourth Embodiment, the insulatingfilm 9 is selectively removed to form opening portions, and Zn p-typeimpurities are introduced through the opening portions to simultaneouslyform the source and drain regions 16 in the pFET region 3, and thep-type gate region 10 in the nFET region 4. Thereafter, as in FourthEmbodiment, a metal film is deposited and selectively removed tosimultaneously form source and drain electrodes 17 in the pFET region 3,and a gate electrode 11 in the nFET region 4.

Next, a protective film 25 of insulating material is deposited on thesubstrate surface, and second opening portions 23 are formed in theprotective film 25 and the insulating film 9 on the both sides of thegate electrode 11 in the nFET region 4. Simultaneously, a third openingportion 32 is formed in the protective film 25 and the insulating film 9formed on the n-type high-resistance layer 6 c of the n-type firstbarrier layer 6 in the pFET region 3.

Then, a gold-germanium (AuGe) alloy and nickel (Ni) are deposited on thesubstrate surface in thicknesses of about 160 nm and about 40 nm,respectively, using a resistive heating method, and are selectivelyremoved using a photolithography technique and an etching technique tosimultaneously form the source and drain electrodes 24 and the backgateelectrode 31. As a result, the p-channel FET illustrated in FIG. 16 isformed. The source and drain electrodes 24 have an ohmic contact withthe n-type high-resistance layer 6 c. The backgate electrode 31 also hasan ohmic contact with the n-type high-resistance layer 6 c. When formingthe second opening portions 23 in the protective film 25 and theinsulating film 9, an opening portion may be simultaneously formed overthe n-type gate region 18 of the pFET region 3 to form the gateelectrode for the pFET region 3, simultaneously with the source anddrain electrodes 24 for the nFET region 4.

As described above, the manufacturing methods of the semiconductordevices 1, 20, 30, and 40 according to certain embodiments the presentinvention enable the p-channel FET and the n-channel FET to besimultaneously formed on the compound semiconductor substrate 2.Further, the methods enable pn junction-type gate regions to besimultaneously formed by providing the n-type gate region 18 for thep-type second channel layer 13 in the p-channel FET, and the p-type gateregion 10 for the n-type first barrier layer 6 in the n-channel FET.Specifically, because the methods enable simultaneous formation ofcomplementary FETs for an enhancement mode, complementary FETs capableof operating at high speed with reduced leak current can be fabricatedin high density on a single compound semiconductor substrate.

The present application contains subject matter related to thatdisclosed in Japanese Priority Patent Applications JP 2009-180653 and JP2010-031710 filed in the Japan Patent Office on Aug. 3, 2009 and Feb.16, 2010, respectively, the entire contents of which are herebyincorporated by reference.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

1. A semiconductor device comprising: a compound semiconductorsubstrate; an n-channel field-effect transistor region formed on thecompound semiconductor substrate, and that includes a first channellayer; an n-type first barrier layer that forms a heterojunction withthe first channel layer, and supplies an n-type charge to the firstchannel layer; and a p-type gate region that has a pn junction-typepotential barrier against the n-type first barrier layer; and ap-channel field-effect transistor region formed on the compoundsemiconductor substrate, and that includes a p-type second channellayer, and an n-type gate region that has a pn junction-type potentialbarrier against the p-type second channel layer, wherein the n-channelfield-effect transistor region is a region that includes the p-typesecond channel layer; an n-type gate layer formed simultaneously withthe n-type gate region; the first channel layer; and the n-type firstbarrier layer laminated in this order above the compound semiconductorsubstrate.
 2. The semiconductor device according to claim 1, wherein thep-channel field-effect transistor region is a region that includes thefirst channel layer, the n-type first barrier layer, and the secondchannel layer laminated in this order above the compound semiconductorsubstrate.
 3. The semiconductor device according to claim 1, furthercomprising a gate-leak prevention layer between the n-type gate regionand the p-type second channel layer.
 4. The semiconductor deviceaccording to claim 3, wherein the p-type second channel layer includesp-type source and drain regions formed as Zn-diffused layers, and thatare separated from each other with the n-type gate region in between. 5.The semiconductor device according to claim 4, further comprising ann-type second barrier layer formed between the compound semiconductorsubstrate and the first channel layer, and that supplies an n-typecharge to the first channel layer.
 6. The semiconductor device accordingto claim 5, wherein the p-channel field-effect transistor regionincludes a backgate electrode.
 7. The semiconductor device according toclaim 1, wherein the p-type second channel layer includes p-type sourceand drain regions formed as Zn-diffused layers, and that are separatedfrom each other with the n-type gate region in between.
 8. Thesemiconductor device according to claim 1, further comprising an n-typesecond barrier layer formed between the compound semiconductor substrateand the first channel layer, and that supplies an n-type charge to thefirst channel layer.
 9. The semiconductor device according to claim 1,wherein the p-channel field-effect transistor region includes a backgateelectrode.
 10. A semiconductor device comprising: a compoundsemiconductor substrate; an n-channel field-effect transistor regionformed on the compound semiconductor substrate, and that includes afirst channel layer; an n-type first barrier layer that forms aheterojunction with the first channel layer, and supplies an n-typecharge to the first channel layer; and a p-type gate region that has apn junction-type potential barrier against the n-type first barrierlayer; and a p-channel field-effect transistor region formed on thecompound semiconductor substrate, and that includes a p-type secondchannel layer, and an n-type gate region that has a pn junction-typepotential barrier against the p-type second channel layer, wherein thep-channel field-effect transistor region includes a backgate electrode,and wherein the backgate electrode of the p-channel field-effecttransistor is formed on the n-type first barrier layer.
 11. Asemiconductor device manufacturing method, comprising the steps of:forming a multilayered film by the sequential epitaxial growth of afirst buffer layer, a first channel layer, an n-type first barrierlayer, a second buffer layer, a p-type second channel layer, and ann-type gate layer on a compound semiconductor substrate; selectivelyremoving the n-type gate layer to form an n-type gate region for ap-channel field-effect transistor; selectively removing the p-typesecond channel layer so as to lay out a p-channel field-effecttransistor region in which the p-type second channel layer remains withthe n-type gate region, and an n-channel field-effect transistor regionin which the n-type first barrier layer remains; forming an insulatingfilm simultaneously on exposed surfaces of the p-channel field-effecttransistor region and the n-channel field-effect transistor region, andforming first opening portions through the insulating film; diffusing Znimpurities through the first opening portions to simultaneously formsource and drain regions for the p-channel field-effect transistor, anda gate region for an n-channel field-effect transistor; forming anelement isolation region that electrically separates the p-channelfield-effect transistor region and the n-channel field-effect transistorregion from each other; and forming a metal electrode in the source anddrain regions for the p-channel field-effect transistor, and in the gateregion for the n-channel field-effect transistor.
 12. The methodaccording to claim 11, further comprising the step of forming a backgateelectrode for the p-channel field-effect transistor on the n-type firstbarrier layer simultaneously when forming a metal electrode in sourceand drain regions for the n-channel field-effect transistor.
 13. Asemiconductor device manufacturing method, comprising the steps of:forming a multilayered film by the sequential epitaxial growth of afirst buffer layer, a p-type second channel layer, an n-type gate layer,an n-type second barrier layer, a first channel layer, and an n-typefirst barrier layer on a compound semiconductor substrate; forming anelement isolation region that electrically separates a p-channelfield-effect transistor region and an n-channel field-effect transistorregion from each other; selectively removing the n-type first barrierlayer, the first channel layer, and the n-type second barrier layer ofthe p-channel field-effect transistor region; selectively removing then-type gate layer of the p-channel field-effect transistor region toform an n-type gate region for a p-channel field-effect transistor;forming an insulating film simultaneously on exposed surfaces of thep-channel field-effect transistor region and the n-channel field-effecttransistor region, and forming opening portions through the insulatingfilm; diffusing Zn impurities through the opening portions tosimultaneously form source and drain regions for the p-channelfield-effect transistor, and a gate region for an n-channel field-effecttransistor; and forming a metal electrode in the source and drainregions for the p-channel field-effect transistor, and in the gateregion for the n-channel field-effect transistor.
 14. The methodaccording to claim 13, further comprising the step of forming a backgateelectrode for the p-channel field-effect transistor on the n-type firstbarrier layer simultaneously when forming a metal electrode in sourceand drain regions for the n-channel field-effect transistor.